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1N4448WSF
Document number: DS35380 Rev. 3 - 2
2 of 4
www.diodes.com
August 2011
? Diodes Incorporated
1N4448WSF
NEW PRODUCT
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current
IFM
500 mA
Average Rectified Output Current
IO
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
PD
400 mW
Thermal Resistance Junction to Ambient Air (Note 4)
RθJA
313
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
75
?
V
IR
= 100
μA
Forward Voltage
VF
0.62 0.72
V
IF
= 5.0mA
?
0.855
IF
= 10mA
?
1.0
IF
= 100mA
?
1.25
IF
= 150mA
Leakage Current (Note 5)
IR
?
2.5
μA
VR
= 75V
?
50
μA
VR
= 75V, T
J
= 150
°C
?
30
μA
VR
= 25V, T
J
= 150
°C
?
25 nA
VR
= 20V
Total Capacitance
CT
?
4.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 4. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at http://www/diodes.com.
5. Short duration pulse test used to minimize self-heating.
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